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BTS 4140 N
Smart High-Side Power Switch One Channel: 1 x 1
Features * Current controlled input * Short circuit protection * Current limitation * Overload protection * Overvoltage protection (including load dump) * Switching inductive loads * Clamp of negative voltage at output with inductive loads * Thermal shutdown with restart * ESD - Protection * Loss of GND and loss of Vbb protection * Very low standby current * Reverse battery protection * Improved electromagnetic compatibility (EMC) Application * All types of resistive, inductive and capacitive loads * Current controlled power switch for 12V, 24V and 42V DC applications * Driver for electromechanical relays * Signal amplifier
2 1
VPS05163
Product Summary Overvoltage protection Operating voltage On-state resistance Vbbin(AZ) Vbb(on) RON SOT-223
4
62 1
V
4.9...60 V
3
General Description N channel vertical power MOSFET with charge pump and current controlled input, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
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2004-01-27
BTS 4140 N
Block Diagram
+ V bb 2 /4
C o n tro l C irc u it OUT 3 R IN IN 1 RL T e m p e ra tu re Sensor
GND
Pin 1 2 3 4
Symbol IN Vbb OUT Vbb
Function Input, activates the power switch in case of connection to GND Positive power supply voltage Output to the load Positive power supply voltage
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BTS 4140 N Maximum Ratings Parameter at Tj = 25C, unless otherwise specified Supply voltage Load current (Short - circuit current, see page 5) Maximum current through the input pin ( DC ) Operating temperature Storage temperature Power dissipation1) TA = 25 C Inductive load switch-off energy dissipation 2) single pulse Tj = 150 C, IL = 0.15 A Load dump protection 3) VLoadDump4)= VA + VS RI=2, td=400ms, VIN= low or high IL = 150 mA, Vbb = 13,5 V Vbb = 27 V Electrostatic discharge voltage (Human Body Model) VESD according to ANSI EOS/ESD - S5.1 - 1993 ESD STM5.1 - 1998 Input pin all other pins 1 5 93.5 127 kV VLoaddump V EAS 1 J Vbb IL I IN Tj T stg Ptot 60 self limited 15 -40 ...+150 -55 ... +150 1.7 W V A mA C Symbol Value Unit
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for V bb connection. PCB is vertical without blown air. 2not subject to production test, specified by design 3more details see EMC-Characteristics on page 7 4V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
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BTS 4140 N Electrical Characteristics Parameter at Tj = -40...150 C, Vbb = 9...42 V unless otherwise specified Thermal Characteristics Thermal resistance @ min. footprint Thermal resistance @ 6 cm 2 cooling area 1) Thermal resistance, junction - soldering point Load Switching Capabilities and Characteristics On-state resistance Pin1 connencted to GND Tj = 25 C, IL = 150 mA, Vbb = 9...52 V Tj = 150 C Tj = 25 C, IL = 50 mA, Vbb = 6 V Nominal load current2) Device on PCB 1) Ta = 85 C , Tj 150 C Turn-on time3) RL = 270 RL = 270 , Vbb = 13.5 V, Tj = 25 C Turn-off time3) RL = 270 RL = 270 , Vbb = 13.5 V, Tj = 25 C Slew rate on3) RL = 270 RL = 270 , Tj = 25 C, Vbb = 13.5 V Slew rate off 3) RL = 270 RL = 270 , Tj = 25 C, Vbb = 13.5 V
VIN = 0V to Vbb 70 to 40% VOUT VIN = Vbb to 0V 10 to 30% VOUT VIN = 0V to Vbb to 10% VOUT VIN = Vbb to 0V to 90% VOUT
Symbol min. Rth(JA) Rth(JA) RthJS RON IL(nom) 0.2 -
Values typ. 86 60 max. 125 72 17
Unit
K/W K/W
1 1.5 2 1.5 3 5 A
ton toff dV/dton -dV/dtoff 1.7 84) 4 1.3 64) 4 40 175 4) 140 45 125 4) 100
s
V/s
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for V bb connection. PCB is vertical without blown air. 2Nominal load current is limited by the current limitation ( see page 5 ) 3Timing values only with high input slewrates, otherwise slower. 4not subject to production test, specified by design Page 4
2004-01-27
BTS 4140 N Electrical Characteristics Parameter at Tj = -40...150 C, Vbb = 9...42 V unless otherwise specified Operating Parameters Operating voltage Standby current Pin1 = open Protection Functions1) Initial peak short circuit current limit (see page 11) Tj = -40 C, Vbb = 13.5 V, tm = 100 s Tj = 25 C Tj = 150 C Repetitive short circuit current limit Tj = Tjt Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), Ibb = 4 mA Overvoltage protection Ibb = 1 mA Thermal overload trip temperature Thermal hysteresis Tjt Tjt 150 10 C K Vbbin(AZ) 62 68 IL(SCr) VON(CL) 0.2 60 0.9 0.7 1.2 V IL(SCp) A Vbb(on) Ibb(off) 4.9 2 60 10 V A Symbol min. Values typ. max. Unit
1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.
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BTS 4140 N Electrical Characteristics Parameter at Tj = -40...150 C, Vbb = 9...42 V unless otherwise specified Input Off state input current VOUT 0.1 V Tj = 25 C, RL = 270 Tj = 150 C On state input current ( Pin1 grounded ) 1) Input resistance Reverse Battery Continuous reverse drain current TC = 25 C Drain-source diode voltage (VOUT > Vbb) IF = 0.2 A, IIN 0,05 mA -VON 600 mV IS 0.2 A IIN(on) RI 0.5 0.3 1 0.05 0.04 1 2.5 k IIN(off) mA Symbol min. Values typ. max. Unit
1Driver circuit must be able to drive currents > 1mA.
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BTS 4140 N EMC-Characteristics
All EMC-Characteristics are based on limited number of sampels and no part of production test. Test Conditions: If not other specified the test circuitry is the minimal functional configuration without any external components for protection or filtering. Supply voltage: Load: Operation mode: DUT-Specific.: Vbb = 13.5V RL = 220 PWM DC On/Off Frequency: 100Hz / Duty Cycle: 50% Temperature: Ta = 23 5C ;
Fast electrical transients Acc. ISO 7637 Test Pulse 1 2 3a 3b 41) 5 Test Level -200 V +200 V -200 V + 200 V -7 V 175 V Test Results On Off Pulse Cycle Time and Generator Impedance 500ms ; 10 500ms ; 10 100ms ; 50 100ms ; 50 0,01 400ms ; 2
C C C C C
E (150V )
C C C C C
E (150V )
The test pulses are applied at Vbb
Definition of functional status Class C E Content All functions of the device are performed as designed after exposure to disturbance. One or more function of a device does not perform as designed after exposure and can not be returned to proper operation without repairing or replacing the device. The value after the character shows the limit.
Test circuit:
Pulse Bat.
Vbb PROFET OUT
IN
RL
1Supply voltage V = 12 V instead of 13,5 V. bb Page 7
2004-01-27
BTS 4140 N Conducted Emission
Acc. IEC 61967-4 (1 / 150 method) Typ. Vbb-Pin Emission at DC-On with 150 -matching network
100 90 80 70 60 50
N o is e Vbb D C
dBV
1 5 0 / 8 -H
40 30 20 10 0 -1 0 -2 0 0 ,1 1 10 100 1000 1 5 0 / 1 3 -N
f / MHz
Typ. Vbb -Pin Emission at PWM-Mode with 150 -matching network
100 90 80 70 60 50
N o is e Vbb PW M
dBV
1 5 0 / 8 -H
40 30 20 10 0 -1 0 -2 0 0 ,1 1 10 100 1000 1 5 0 / 1 3 -N
f / MHz
Test circuit:
5H 150-Network
Vbb PROFET IN OUT
5H
BSS100
R
For defined decoupling and high reproducibility a defined choke (5H at 1 MHz) is inserted between supply and Vbb-pin. Page 8
2004-01-27
BTS 4140 N Conducted Susceptibility
Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection) Direct Power Injection: Failure criteria: Forward Power CW Amplitude and frequency deviation max. 10% at Out
Typ. Vbb-Pin Susceptibility at DC-On/Off
40 35 30 25
dBm
20 15 10 5 0 1 10 100 1000
D e v ic e : D a te C o d e : Load: O -M o d e : C o u p lin g P o in t : M o n it o r in g : M o d u la t io n : M e a s u re m e n t: BTS 4140 E0150 220 O hm O N / O FF VBB O ut CW P fw d
L im it ON OFF
f / MHz
Typ. Vbb -Pin Susceptibility at PWM-Mode
40 35 30 25
dBm
20 15 10 5 0 1 10 100 1000
D e v ic e : D a te C o d e : Load: O -M o d e : C o u p lin g P o in t : M o n it o r in g : M o d u la t io n : M e a s u re m e n t: BTS 4140 E0150 220 O hm PW M 100 H z 50% VBB O ut CW P fw d
L im it PW M
f / MHz
Test circuit:
5H HF
Vbb
150
PROFET IN
OUT
5H
150
6,8nF BSS100
RL
6,8nF
For defined decoupling and high reproducibility the same choke and the same 150 -matching network as for the emission measurement is used. Page 9
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BTS 4140 N Terms
Ibb
Inductive and overvoltage output clamp
+ Vbb V
Vbb IL OUT VON
Z V ON
V
bb
PROFET
IN V OUT
OUT IN
I IN
VON clamped to 60 V min.
Input circuit (ESD protection)
+ Vbb
Overvoltage protection of logic part
+ Vbb
V
ESD Control. Circuit R I
V Z2
Logic
IN
R IN
Reverse battery protection
- Vbb
IN Signal GND
Vbb,AZ = V Z2 + Ibb * RIN = 62V min.
Logic RIN IN
Power Inverse Diode
OUT
RL
Signal GND Power GND
R I=1k typ., Temperature protection is not active during inverse current.
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BTS 4140 N Inductive Load switch-off energy dissipation
E bb E AS Vbb PROFET OUT ELoad
Vbb disconnect with charged inductive load
Vb b PR O FET IN bb OUT
=
IN ZL I IN
V
{
R L
L
EL
ER
Energy stored in load inductance: EL = 1/2 * L * IL2 While demagnetizing load inductance, the energy dissipated in PROFET is E AS = E bb + EL - ER = VON(CL) * iL(t) dt, with an approximate solution for RL > 0:
E AS =
IL * R L IL * L ) * ( V b b + | V O U T ( C L )| ) * ln (1 + | V O U T ( C L )| 2 * RL
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BTS 4140 N Typ. transient thermal impedance ZthJA=f(tp) @ 6cm 2 heatsink area Parameter: D=tp/T
10
2
Typ. transient thermal impedance Z thJA=f(tp) @ min. footprint Parameter: D=tp/T
10 2
K/W
K/W
Z thJA
D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 D=0
4
ZthJA
10 1
10 1
10 0
10 0
D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 D=0
4
10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10
s tp
10
10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10
s tp
10
Typ. on-state resistance RON = f(Tj) ; Vbb = 9V ; Pin1 grounded; IL=150mA
1.6
Typ. on-state resistance RON = f(V bb); IL = 150mA ; Pin1 grounded
3
1.2
RON
RON
2
150C
1
0.8
1.5
0.6 1 0.4 0.5 0.2
25C -40C
0 -40 -20
0
20
40
60
80 100 120
C Tj
160
0 0
5
10
15
20
25
30
35
40
V Vbb
50
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BTS 4140 N Typ. turn on time ton = f(Tj ); R L = 270
80
Typ. turn off time toff = f(Tj); RL = 270
80
s
9V 13.5V
s
60
60
9...42V
ton
50
42V
toff
50
40
40
30
30
20
20
10
10
0 -40 -20
0
20
40
60
80 100 120
C Tj
160
0 -40 -20
0
20
40
60
80 100 120
C Tj
160
Typ. slew rate on dV/dton = f(Tj ) ; RL = 270
3
Typ. slew rate off dV/dtoff = f(Tj); RL = 270
6
V/s V/s dV dton -dV dtoff
42V
5 4.5 4 3.5
2
1.5
3 2.5
42V
1
13.5V
2 1.5
13,5V
0.5
9V
1 0.5
9V
0 -40 -20
0
20
40
60
80 100 120
C Tj
160
0 -40 -20
0
20
40
60
80 100 120
C Tj
160
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2004-01-27
BTS 4140 N Typ. initial peak short circuit current limit IL(SCp) = f(Tj) ; Vbb = 13,5 V; tm = 100 s
1
Typ. initial short circuit shutdown time toff(SC) = f(Tj,start)
10 3
ms A
10 2
I L(SCp)
0.6
t off(SC)
10 1 10 0
0.4
0.2
13,5V 24V 42V
0 -40 -20
0
20
40
60
80 100 120
C Tj
160
10 -1 -40 -20
0
20
40
60
80 100 120
C Tj
160
Typ. initial peak short circuit current limit IL(SCp) = f(Vbb); tm = 100 s
1.2
Typ. current limitation characteristic: IL(SC) = f(VON ), Vbb = 13,5V
1
A
-40C 25C
A
I L(SCp)
0.8
150C
I L(SC)
35 40 50
0.6
0.6 0.4 0.4
0.2
0.2
0 0
5
10
15
20
25
30
V Vbb
0 0
4
8
12
16
V VON
24
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BTS 4140 N Typ. standby current Ibb(off) = f(Tj ) ; Pin1 open
6
60V
Maximum allowable inductive switch-off energy, single pulse EAS = f(I L); T jstart = 150C
2.2
J A
1.8
Ibb(off)
1.6
EAS
42V 13.5V
4
1.4 1.2
3 1 2 0.8 0.6 0.4 0.2 0 -40 -20 0 20 40 60 80 100 120
1
C Tj
160
0 50
75
100
125
150
175
mA IL
225
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BTS 4140 N
Timing diagrams
Figure 1a: Vbb turn on: Figure 2b: Switching a lamp
I IN
I IN
Vbb
VOUT
I
L
IL
t
t
Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition
I IN
Figure 2c: Switching an inductive load
I IN
V OUT
90% t on d V /d to n 10% t d V / d to ff
VOUT
o ff
IL
IL t
t
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2004-01-27
BTS 4140 N
Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling
I IN
Figure 3b: Short circuit in on-state shut down by overtemperature, restart by cooling
I IN
V OUT O utput short to G N D
V OUT normal operation Output short to GND
I
L
I
L(S C p)
I
L(S C r) t
I
L
I
tm t off(S C )
L(SCr) t
Heating up of the chip may require several milliseconds, depending on external conditions.
Figure 4: Overtemperature: Reset if Tj < Tjt
I IN
VOUT
TJ
t
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2004-01-27
BTS 4140 N
Package and ordering code
all dimensions in mm
Sales code Ordering code,
A 6.5 0.2 3 0.1 B 4 0.1 max
BTS 4140 N Q67060-S6084-A101
1.6 0.1
7 0.3
15 max
1 0.7 0.1
2
3 2.3 4.6
0.5 min
0.28 0.04
0.25
M
A
0.25
M
B
GPS05560
Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
3.50.2
+0.2 acc. to DIN 6784
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2004-01-27

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